Infineon IFF450B12ME4PB11

Infineon · Thyristors & Power Discretes · MPN IFF450B12ME4PB11

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Specifications

Pd - Power Dissipation40W
Current - Collector(Ic)450A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)28nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,450A
Operating Temperature-40℃~+150℃@(Tj)

Technical details

40W 450A 1.2kV FS (Field Stop) IGBT Modules RoHS

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