Infineon IFF300B12ME4PB11

Infineon · Thyristors & Power Discretes · MPN IFF300B12ME4PB11

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Specifications

Pd - Power Dissipation20mW
Current - Collector(Ic)300A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,300A
Operating Temperature-40℃~+150℃

Technical details

20mW 300A 1.2kV FS (Field Stop) IGBT Modules RoHS

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