Infineon · Thyristors & Power Discretes · MPN FZ900R12KE4
No reviews yet — be the first to review Infineon FZ900R12KE4.
| Td(off) | 610ns |
|---|---|
| Pd - Power Dissipation | 4.3kW |
| Td(on) | 240ns |
| Current - Collector(Ic) | 900A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 2.2nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@32.0mA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.75V@900A,15V |
| Reverse Recovery Time(trr) | - |
IGBT 1.2kV 900A 4300W Screw Terminals