Infineon · Thyristors & Power Discretes · MPN FZ825R33HE4DBPSA1
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| Pd - Power Dissipation | 2400kW |
|---|---|
| Current - Collector(Ic) | 825A |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| Input Capacitance(Cies) | 93.5nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
2400kW 825A 3.3kV FS (Field Stop) IGBT Modules RoHS