Infineon FZ800R45KL3B5

Infineon · Thyristors & Power Discretes · MPN FZ800R45KL3B5

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Specifications

Pd - Power Dissipation9kW
Current - Collector(Ic)1.6kA
Collector-Emitter Breakdown Voltage (Vces)4.5kV
Input Capacitance(Cies)3.1nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.85V@15V,800A
Operating Temperature-50℃~+125℃

Technical details

9kW 1.6kA 4.5kV FS (Field Stop) IGBT Modules RoHS

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