Infineon · Thyristors & Power Discretes · MPN FZ800R16KF4NOSA1
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| Pd - Power Dissipation | 6.25kW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 800A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.6kV |
| Input Capacitance(Cies) | 130nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
6.25kW 800A 1.6kV Single IGBTs