Infineon FZ400R12KS4P

Infineon · Thyristors & Power Discretes · MPN FZ400R12KS4P

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Specifications

Current - Collector(Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)26nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.7V@15V,400A
Operating Temperature-40℃~+125℃

Technical details

800A 1.2kV IGBT Modules RoHS

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