Infineon FZ3600R17KE3

Infineon · Thyristors & Power Discretes · MPN FZ3600R17KE3

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Specifications

Pd - Power Dissipation-
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+125℃@(Tj)

Technical details

1.7kV IGBT Modules

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