Infineon FZ250R65KE3

Infineon · Thyristors & Power Discretes · MPN FZ250R65KE3

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Specifications

Pd - Power Dissipation1000kW
Td(off)7.3us
Td(on)650ns
Current - Collector(Ic)250A
Collector-Emitter Breakdown Voltage (Vces)6.5kV
Input Capacitance(Cies)69nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.4V@35mA
Operating Temperature-50℃~+125℃
Vce Saturation(VCE(sat))3.4V@250A,15V
Switching Energy(Eoff)1.2J
Turn-On Energy (Eon)1.4J

Technical details

IGBT 6.5kV 250A 1000kW Screw Terminals

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