Infineon · Thyristors & Power Discretes · MPN FZ2400R12KE3B9NOSA1
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| Pd - Power Dissipation | 11.5kW |
|---|---|
| Current - Collector(Ic) | 3.2kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 170nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,2.4kA |
| Operating Temperature | -40℃~+125℃@(Tj) |
11.5kW 3.2kA 1.2kV IGBT Modules