Infineon FZ2400R12HE4PB9

Infineon · Thyristors & Power Discretes · MPN FZ2400R12HE4PB9

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Specifications

Current - Collector(Ic)2.4kA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)150nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃

Technical details

2.4kA 1.2kV FS (Field Stop) IGBT Modules RoHS

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