Infineon FZ2000R33HE4

Infineon · Thyristors & Power Discretes · MPN FZ2000R33HE4

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Specifications

Td(off)-
Pd - Power Dissipation4200kW
Td(on)-
Current - Collector(Ic)2kA
Collector-Emitter Breakdown Voltage (Vces)3.3kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,2kA(Typ)
Gate Charge(Qg)-
Operating Temperature-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)-

Technical details

4200kW 2kA 3.3kV FS (Field Stop) IGBT Modules RoHS

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