Infineon FZ1800R17HP4B29

Infineon · Thyristors & Power Discretes · MPN FZ1800R17HP4B29

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Specifications

Pd - Power Dissipation11.5kW
Current - Collector(Ic)1.8kA
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)145nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.25V@15V,1.8kA
Operating Temperature-40℃~+150℃@(Tj)

Technical details

11.5kW 1.8kA 1.7kV FS (Field Stop) IGBT Modules RoHS

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