Infineon FZ1800R17HE4B9

Infineon · Thyristors & Power Discretes · MPN FZ1800R17HE4B9

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Specifications

Pd - Power Dissipation11.5kW
Current - Collector(Ic)1.8kA
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-

Technical details

11.5kW 1.8kA 1.7kV IGBT Modules RoHS

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