Infineon FZ1800R12KL4C

Infineon · Thyristors & Power Discretes · MPN FZ1800R12KL4C

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Specifications

Pd - Power Dissipation11.5kW
Current - Collector(Ic)2.85kA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)135nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+125℃@(Tj)

Technical details

11.5kW 2.85kA 1.2kV IGBT Modules

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