Infineon FZ1800R12KF4S1

Infineon · Thyristors & Power Discretes · MPN FZ1800R12KF4S1

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Specifications

Pd - Power Dissipation10.5kW
Operating Temperature-40℃~+150℃@(Tj)
Current - Collector(Ic)2.7kA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)110nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-

Technical details

10.5kW 2.7kA 1.2kV Single IGBTs RoHS

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