Infineon · Thyristors & Power Discretes · MPN FZ1800R12HP4B9
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| Pd - Power Dissipation | 10.5kW |
|---|---|
| Current - Collector(Ic) | 2.7kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 110nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,1800A |
| Operating Temperature | -40℃~+150℃ |
10.5kW 2.7kA 1.2kV IGBT Modules RoHS