Infineon · Thyristors & Power Discretes · MPN FZ1600R17KF6CB2S1NOSA1
No reviews yet — be the first to review Infineon FZ1600R17KF6CB2S1NOSA1.
| Pd - Power Dissipation | 10.5kW |
|---|---|
| Current - Collector(Ic) | 1.6kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 130nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
10.5kW 1.6kA 1.7kV FS (Field Stop) IGBT Modules RoHS