Infineon · Thyristors & Power Discretes · MPN FZ1600R12KE3NOSA1
No reviews yet — be the first to review Infineon FZ1600R12KE3NOSA1.
| Pd - Power Dissipation | 7.8kW |
|---|---|
| Operating Temperature | -40℃~+125℃@(Tj) |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 115nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
7.8kW 1.2kV Single IGBTs