Infineon FZ1600R12HP4

Infineon · Thyristors & Power Discretes · MPN FZ1600R12HP4

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Specifications

Pd - Power Dissipation9.4kW
Current - Collector(Ic)2.4kA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)98nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.05V@15V,1.6kA
Operating Temperature-40℃~+150℃@(Tj)

Technical details

9.4kW 2.4kA 1.2kV IGBT Modules RoHS

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