Infineon FZ1400R33HE4

Infineon · Thyristors & Power Discretes · MPN FZ1400R33HE4

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Specifications

Current - Collector(Ic)1.4kA
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Input Capacitance(Cies)187nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.3V@15V,1400A(Typ)
Operating Temperature-40℃~+150℃@(Tj)

Technical details

1.4kA 3.3kV FS (Field Stop) IGBT Modules RoHS

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