Infineon FZ1200R45HL3S7BPSA1

Infineon · Thyristors & Power Discretes · MPN FZ1200R45HL3S7BPSA1

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Specifications

Td(off)-
Pd - Power Dissipation2400kW
Td(on)-
Current - Collector(Ic)1.2kA
Collector-Emitter Breakdown Voltage (Vces)5.9kV
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.8V@15V,1.2kA
Gate Charge(Qg)-
Operating Temperature-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)-

Technical details

2400kW 1.2kA 5.9kV FS (Field Stop) IGBT Modules RoHS

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