Infineon FZ1200R17HP4

Infineon · Thyristors & Power Discretes · MPN FZ1200R17HP4

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Specifications

Pd - Power Dissipation7.8kW
Current - Collector(Ic)1.2kA
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)97nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.25V@15V,1200A
Operating Temperature-40℃~+150℃

Technical details

7.8kW 1.2kA 1.7kV IGBT Modules RoHS

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