Infineon · Thyristors & Power Discretes · MPN FZ1200R17HE4
No reviews yet — be the first to review Infineon FZ1200R17HE4.
| Pd - Power Dissipation | 7.8kW |
|---|---|
| Current - Collector(Ic) | 1.2kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 97nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,1200A |
| Operating Temperature | -40℃~+150℃ |
7.8kW 1.2kA 1.7kV IGBT Modules RoHS