Infineon · Thyristors & Power Discretes · MPN FZ1200R12KE3NOSA1
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| Pd - Power Dissipation | 5.6kW |
|---|---|
| Current - Collector(Ic) | 1.7kA |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 86nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+125℃@(Tj) |
5.6kW 1.7kA 1.2kV IGBT Modules