Infineon · Thyristors & Power Discretes · MPN FZ1200R12HE4P
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| Current - Collector(Ic) | 1.825kA |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 74nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃ |
1.825kA 1.2kV FS (Field Stop) IGBT Modules RoHS