Infineon · Thyristors & Power Discretes · MPN FZ1000R33HL3B60
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| Pd - Power Dissipation | 1600kW |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 1kA |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| Input Capacitance(Cies) | 190nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
1600kW 1kA 3.3kV FS (Field Stop) Single IGBTs RoHS