Infineon FS950R08A6P2LBBPSA1

Infineon · Thyristors & Power Discretes · MPN FS950R08A6P2LBBPSA1

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Specifications

Pd - Power Dissipation870W
Current - Collector(Ic)450A
Collector-Emitter Breakdown Voltage (Vces)750V
Input Capacitance(Cies)80nF@50V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.35V@15V,450A
Operating Temperature-40℃~+150℃@(Tj)

Technical details

870W 450A 750V FS (Field Stop) IGBT Modules RoHS

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