Infineon FS75R17KE3

Infineon · Thyristors & Power Discretes · MPN FS75R17KE3

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Specifications

Pd - Power Dissipation465W
Current - Collector(Ic)130A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)6.8nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.45V@15V,75A
Operating Temperature-40℃~+125℃

Technical details

465W 130A 1.7kV IGBT Modules RoHS

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