Infineon · Thyristors & Power Discretes · MPN FS75R12W2T7_B11
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| Td(off) | 270ns |
|---|---|
| Td(on) | 130ns |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 53pF |
| Input Capacitance(Cies) | 15.1nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@1.7mA |
| Gate Charge(Qg) | 1.25uC |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.69V@75A,15V |
| Switching Energy(Eoff) | 5.47mJ |
IGBT 1.2kV 75A Through Hole,62.8x56.7mm