Infineon · Thyristors & Power Discretes · MPN FS75R12KT4B15
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| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 385W |
| Td(on) | 130ns |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 4.3nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@2.4mA |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.25V@75A,15V |
| Switching Energy(Eoff) | 3.9mJ |
| Turn-On Energy (Eon) | 4.7mJ |
IGBT FS (Field Stop) 1.2kV 75A 385W Through Hole,107.5x45mm