Infineon · Thyristors & Power Discretes · MPN FS75R12KE3B9
No reviews yet — be the first to review Infineon FS75R12KE3B9.
| Pd - Power Dissipation | 350W |
|---|---|
| Current - Collector(Ic) | 105A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 5.3nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,75A |
| Operating Temperature | -40℃~+150℃@(Tj) |
350W 105A 1.2kV IGBT Modules RoHS