Infineon · Thyristors & Power Discretes · MPN FS660R08A6P2FB
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| Pd - Power Dissipation | 1.053kW |
|---|---|
| Current - Collector(Ic) | 450A |
| Collector-Emitter Breakdown Voltage (Vces) | 750V |
| Input Capacitance(Cies) | 80nF@50V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.35V@15V,450A |
| Operating Temperature | -40℃~+150℃@(Tj) |
1.053kW 450A 750V FS (Field Stop) IGBT Modules RoHS