Infineon · Thyristors & Power Discretes · MPN FS50R12W1T7_B11
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 270ns |
| Td(on) | 45ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 39pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@1.28mA |
| Gate Charge(Qg) | 920nC@600V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.5V@50A,15V |
| Reverse Recovery Time(trr) | - |
50A 1.2kV IGBT Modules RoHS