Infineon · Thyristors & Power Discretes · MPN FS50R12KT4B15
No reviews yet — be the first to review Infineon FS50R12KT4B15.
| Td(off) | 300ns |
|---|---|
| Pd - Power Dissipation | 280W |
| Td(on) | 130ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| Input Capacitance(Cies) | 2.8nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,50A |
| Gate Charge(Qg) | 380nC |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Switching Energy(Eoff) | 2.5mJ |
IGBT FS (Field Stop) 1.2kV 50A 280W Through Hole,107.5x45mm