Infineon · Thyristors & Power Discretes · MPN FS50R12KT4B11
No reviews yet — be the first to review Infineon FS50R12KT4B11.
| Pd - Power Dissipation | 280W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.8nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
280W 50A 1.2kV FS (Field Stop) Single IGBTs RoHS