Infineon · Thyristors & Power Discretes · MPN FS50R12KT3
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| Pd - Power Dissipation | 280W |
|---|---|
| Td(off) | 420ns |
| Td(on) | 90ns |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2mA |
| Operating Temperature | -40℃~+125℃ |
| Gate Charge(Qg) | 470nC |
| Vce Saturation(VCE(sat)) | 2.15V@50A,15V |
| Switching Energy(Eoff) | 5.5mJ |
| Turn-On Energy (Eon) | 5mJ |
280W 75A 1.2kV FS (Field Stop) SMD,107.5x45mm IGBT Modules RoHS