Infineon FS500R17OE4D

Infineon · Thyristors & Power Discretes · MPN FS500R17OE4D

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Specifications

Pd - Power Dissipation3kW
Current - Collector(Ic)740A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)40nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.3V@15V,500A
Operating Temperature-40℃~+150℃

Technical details

3kW 740A 1.7kV FS (Field Stop) IGBT Modules RoHS

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