Infineon FS450R17OE4

Infineon · Thyristors & Power Discretes · MPN FS450R17OE4

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Specifications

Pd - Power Dissipation2.4kW
Current - Collector(Ic)630A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)36nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.3V@15V,450A
Operating Temperature-40℃~+150℃

Technical details

2.4kW 630A 1.7kV FS (Field Stop) IGBT Modules RoHS

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