Infineon · Thyristors & Power Discretes · MPN FS3L50R07W2H3FB11
No reviews yet — be the first to review Infineon FS3L50R07W2H3FB11.
| Td(off) | 255ns;175ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 37ns;30ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 95pF;51pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,50A |
| Gate Charge(Qg) | 500nC@15V;300nC@15V |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.6V;1.8V |
| Switching Energy(Eoff) | 1.2mJ;420uJ |
20mW 50A 650V FS (Field Stop) IGBT Modules RoHS