Infineon · Thyristors & Power Discretes · MPN FS3L40R07W2H5FB11
No reviews yet — be the first to review Infineon FS3L40R07W2H5FB11.
| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.81V@15V,20A |
| Operating Temperature | -40℃~+150℃@(Tj) |
20mW 40A 650V FS (Field Stop) IGBT Modules RoHS