Infineon · Thyristors & Power Discretes · MPN FS3L25R12W2H3B11
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| Td(off) | 240ns |
|---|---|
| Pd - Power Dissipation | 175W |
| Td(on) | 55ns |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.43nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.25V@0.85mA |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.6V@25A,15V |
| Switching Energy(Eoff) | 600uJ |
| Turn-On Energy (Eon) | 670uJ |
IGBT 1.2kV 25A 175W Through Hole,62.8x56.7mm