Infineon · Thyristors & Power Discretes · MPN FS35R12W1T4
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| Td(off) | 32ns |
|---|---|
| Pd - Power Dissipation | 225W |
| Td(on) | 25ns |
| Current - Collector(Ic) | 65A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.2mA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.25V@35A,15V |
| Reverse Recovery Time(trr) | - |
IGBT 1.2kV 65A 225W Through Hole,62.8x33.8mm