Infineon · Thyristors & Power Discretes · MPN FS30R06W1E3_B11
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| Pd - Power Dissipation | 150W |
|---|---|
| Td(off) | - |
| Td(on) | - |
| Current - Collector(Ic) | 45A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@300uA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.55V@30A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 620uJ |
150W 45A 600V IGBT Module IGBT Modules RoHS