Infineon · Thyristors & Power Discretes · MPN FS25R12W1T4_B11
No reviews yet — be the first to review Infineon FS25R12W1T4_B11.
| Td(off) | 180ns |
|---|---|
| Pd - Power Dissipation | 205W |
| Td(on) | 50ns |
| Current - Collector(Ic) | 45A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@0.8mA |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 200nC |
| Vce Saturation(VCE(sat)) | 2.25V@25A,15V |
| Switching Energy(Eoff) | 2.2mJ |
205W 45A 1.2kV FS (Field Stop) Through Hole,62.8x33.8mm IGBT Modules RoHS