Infineon · Thyristors & Power Discretes · MPN FS200R12N3T7
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| Td(off) | 352ns |
|---|---|
| Td(on) | 172ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.14nF |
| Input Capacitance(Cies) | 40.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@4.6mA |
| Gate Charge(Qg) | 3.34uC |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.8V@200A,15V |
| Switching Energy(Eoff) | 13.6mJ |
| Turn-On Energy (Eon) | 25.5mJ |
200A 1.2kV Through Hole,122x62.5mm IGBT Modules RoHS