Infineon · Thyristors & Power Discretes · MPN FS200R12KT4R
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| Td(off) | 320ns |
|---|---|
| Pd - Power Dissipation | 1kW |
| Td(on) | 140ns |
| Current - Collector(Ic) | 280A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 500pF |
| Input Capacitance(Cies) | 14nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@7.6mA |
| Gate Charge(Qg) | 1.65uC@15V |
| Operating Temperature | -40℃~+150℃ |
| Switching Energy(Eoff) | 11mJ |
| Turn-On Energy (Eon) | 10.5mJ |
1kW 280A 1.2kV IGBT Modules RoHS