Infineon · Thyristors & Power Discretes · MPN FS150R12PT4
No reviews yet — be the first to review Infineon FS150R12PT4.
| Pd - Power Dissipation | 680W |
|---|---|
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 9.35nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,150A |
| Operating Temperature | -40℃~+150℃ |
680W 200A 1.2kV FS (Field Stop) IGBT Modules RoHS