Infineon · Thyristors & Power Discretes · MPN FS150R12KT4
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| Td(off) | 370ns |
|---|---|
| Pd - Power Dissipation | 750W |
| Td(on) | 115ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 350pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@5.3mA |
| Gate Charge(Qg) | 1.25uC |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.1V@150A,15V |
| Switching Energy(Eoff) | 10mJ |
750W 150A 1.2kV FS (Field Stop) Through Hole,122x62mm IGBT Modules RoHS