Infineon FS150R06KE3

Infineon · Thyristors & Power Discretes · MPN FS150R06KE3

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Specifications

Pd - Power Dissipation430W
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)9.3nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃@(Tj)

Technical details

430W 150A 600V FS (Field Stop) IGBT Modules RoHS

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